mobility n. 1.可動性,活動性,能動性。 2.靈活性,可變動性。 3.【物理學(xué)】動性,遷移率;【化學(xué)】淌度;【軍事】運動性,機動性。 the ionic mobility 離子遷移率[淌度]。 n. 群眾。 mobility and nobility 〔戲謔語〕老百姓和貴族。
electron n. 【物理學(xué)】電子。 the electron beam 電子束。 the electron theory 電子(學(xué))說。
After this interview , i learned about electron mobility 通過這次訪問,我了解到電子遷移。
High electron mobility transistor hemt 高速電子遷移率晶體管
Electron mobility detector 電子適移率檢測器
I - v testing of a single transistor has been carried out . the p - si film is prepared by ela , and electron mobility is calculated about 30cm2 / v 對用激光晶化法制備的多晶硅薄膜所制備的p - si - tft單管進行了-測試,計算電子遷移率為約30cm ~ 2 v
Due to the good performance of gaas devices of high frequency , high electron mobility and low noise , the high frequency devices are mostly made of gaas materials now 由于gaas器件優(yōu)良的高頻、高電子遷移率、低噪聲性能,所以現(xiàn)在高頻器件一般都選用gaas材料。
Finally , the electron mobility in 6h - sic inversion layers is studied by single - particle monte carlo technique . the simulation results fit the experimental data very well 對6h sic反型層遷移率進行的moniecaro模擬結(jié)果表明,庫侖中心的相關(guān)性,庫侖電荷量及電荷中心和sic侶。
Based on gan hemt device physics and experiment results , we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model 基于ganhemt器件物理和實驗分析測試結(jié)果,發(fā)現(xiàn)電子遷移率與二維電子氣濃度有關(guān),并提出了一種gan電流崩塌效應(yīng)的新物理模型。
This model described relationship of current collapse and traps in buffer layer , and the normalized product of electron mobility and 2deg density with and without current collapses was 0 . 95 vgs 該模型描述了電流崩塌效應(yīng)與緩沖層中陷阱的相互關(guān)系,并獲得了電流崩塌前后遷移率與二維電子氣濃度乘積的歸一化值0 . 95 vgs 。
Mgf plays the role of segregation . the third method is to enhance the oel by means of making complex with n - vi compounds . el - vi compounds are very stable and possessing higher electron mobility than organic materials 但電子不是在真空中,而是在固體中加速的,我們稱它為固態(tài)陰極射線發(fā)光或類陰極射線發(fā)光,它的激發(fā)態(tài)是成對的電子及空穴。
Although electrons do not move quite as easily in polysilicon as they do in the single - crystal kind , research has produced 3 - d transistors with 90 to 95 percent of the electron mobility seen in their 2 - d counterparts 雖然電子在多晶矽中移動不如在單晶矽中那麼容易,但在這項研究做出來的三維電晶體里,電子的移動速率已達同類二維晶片的90 ~ 95 % 。
In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field. In semiconductors, there is an analogous quantity for holes, called hole mobility.